weitron http://www .weitron.com.tw rating symbol v alue unite v ds v gs i d i dm p d r ja t j t st g c c v v a a w c/w g a t e-s our c e v oltage p ulsed d r ain c ur r en t p o w er d issipa tion m aximax j unc tion-t o-a mbien t maximum ratings ( t a =25?c u nless o ther wise s p ecified) device marking surface mount p-channel d 8 7 6 5 1 2 3 4 d d d s s s g sop-8 1 featu r es: description: * super high dense * cell design for low r ds(on) * r ds(on) <20m @v gs = -10v * r ds(on) <35m @v gs = -4.5v * simple drive requirement * lower on-resistance * fast switching the WTK4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-e ectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. -30 -8 -6 -50 2.5 50 enhancement mode mosfet (1) 1/6 03-may-07 le a d( p b) - f r ee p b WTK4435=4435sc continuous drain current (t a =70c) (t a =25c) (t a =25c) operating junction temperature range storage temperature range +150 -55 to +150 drain-source voltage WTK4435 drain current -8 amperes drain source voltage -30 voltage 20
weitron http://www .weitron.com.tw input c apacitanc e v ds =-15v , v gs =0v , f=1mhz output c apacitanc e v ds =-15v , v gs =0v , f=1mhz r e v erse t r ansf er c apacitanc e v ds =-15v , v gs =0v , f=1mhz t otal g a t e c har ge (2) v ds =-15v , i d =-4.6a, v =-10v d r ain-s our c e b r eakdo wn v oltage v gs =0v , i d =-250 ua g a t e-s our c e t hr eshold v oltage v ds =v gs , i d =-250 ua g a t e-s our c e l eak age c ur r en t v ds =0v , v gs = 20v d r ain-s our c e on-r esistanc e v gs =-10v , i d =-8a f or w ar d t r ansc onduc tanc e v ds =-10v , i d =-8a static dynamic switching characteristic symbol unit min t yp max v (br)dss v gs (th) r ds ( on ) v sd i gss i dss g f s c iss c oss c rss t d ( on ) t ) qg qgs qgd -30 - v -1.0 - -3.0 v - - - - -1 -5 100 na m a s - - 35 20 2800 1400 350 f p 30 120 80 47 9.5 8 -0.75 -1.2 ns ns ns ns nc nc nc v - 20 - electrical characteristics ( t a =25 c u nless other wise not ed) z er o g a t e v oltage d r ain c ur r en t v ds =-24v , v gs =0v v ds =-30v , v gs =0v - - - 20 - - - - - - - - - - - i s - -2.1 a - i sm - -50 a - - - - - - - - - - t ur n-on d ela y t ime (2) t ur n-o t ime + - - rise time t t fall time f r notes: v gs =-4.5v , i d =-5a v ds = -15v, i d = -1a, v gs = -10v, r g = 6 , r d = 15 v ds = -15v, i d = -1a, v gs = -10v, r g = 6 , r d = 15 v ds = -15v, i d = -1a, v gs = -10v, r g = 6 , r d = 15 v ds = -15v, i d = -1a, v gs = -10v, r g = 6 , r d = 15 gs g a t e-s our c e c har ge v ds =-15v , i d =-4.6a, v =-10v gs g a t e-d r ain c har ge v ds =-15v , i d =-4.6a, v =-10v d r ain-s our c e d io de f or w ar d v oltage (2) gs v gs =0v , i s =-2.1a 2/6 03-may-07 WTK4435 1. pulse width limited by max. junction temperature. 2. pulse width 300us, duty cycle 2%. pulsed source current(body diode) (1) continuous source current(body diode) v d= v g =0v, v s =-1.2v
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sop-8 package outline dimensions u nit:mm weitron http://www .weitron.com.tw 1 (4x) b eb e1 l 7(4x) a 2 1 a a c symbols min 1 . 3 5 0 . 1 0 0 . 3 5 0 . 1 8 4 . 6 9 3 . 5 6 5 . 7 0 1 . 2 7 b s c 0 . 6 0 0? max 1 . 7 5 0 . 2 0 0 . 4 5 0 . 2 3 4 . 9 8 4 . 0 6 6 . 3 0 0 . 8 0 8? millimeters a a 1 b c d e 1 e b e l 7 d e 6/6 03-may-07 WTK4435
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